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v02.1202
MICROWAVE CORPORATION
HMC414MS8G
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
Features
Gain: 20 dB Saturated Power: +30 dBm 32% PAE Supply Voltage: +2.75V to +5.0 V Power Down Capability Low External Part Count
8
AMPLIFIERS - SMT
Typical Applications
This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: * BLUETOOTH * MMDS
Functional Diagram
General Description
The HMC414MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5.0V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.
Electrical Specifications, TA = +25 C, As a Function of Vs, Vpd = 3.6V
Vs = 3.6V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V / 3.6V Vpd = 3.6V tON, tOFF 30 21 17 Typ. 2.2 - 2.8 20 0.03 8 9 25 27 35 6.5 0.002 / 240 7 45 35 23 25 0.04 17 Max. Min. Typ. 2.2 - 2.8 20 0.03 8 9 27 30 39 7.0 0.002 / 300 7 45 25 0.04 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA mA ns Vs = 5.0V
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v02.1202
MICROWAVE CORPORATION
HMC414MS8G
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
Gain vs. Temperature, Vs= 3.6V
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz)
Gain vs. Temperature, Vs= 5.0V
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz)
8
AMPLIFIERS - SMT
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GAIN (dB)
GAIN (dB)
+25 C +85 C -40 C
+25 C +85 C -40 C
2.9
3
2.9
3
Return Loss, Vs= 3.6V
0 -2 -4
S11
Return Loss, Vs= 5.0V
0 -2 -4
S11 S22
RETURN LOSS (dB)
-6 -8 -10 -12 -14 -16 -18 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz)
RETURN LOSS (dB)
S22
-6 -8 -10 -12 -14 -16 -18 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz)
P1dB vs. Temperature, Vs= 3.6V
32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz)
P1dB vs. Temperature, Vs= 5.0V
32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz)
P1dB (dBm)
+25 C +85 C -40 C
P1dB (dBm)
+25 C +85 C -40 C
2.9
3
2.9
3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.1202
HMC414MS8G
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
8
AMPLIFIERS - SMT
Psat vs. Temperature, Vs= 3.6V
32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz)
Psat vs. Temperature, Vs= 5.0V
32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz)
Psat (dBm)
+25 C +85 C -40 C
Psat (dBm)
+25 C +85 C -40 C
2.9
3
2.9
3
Power Compression@ 2.4 GHz, Vs= 3.6V
34 32 30 Pout (dBm) 28 Gain (dB) 26 PAE (%) 24 22 20 18 16 14 12 10 8 6 4 2 0 -14 -12 -10 -8 -6 -4 -2 0
Power Compression@ 2.4 GHz, Vs= 5.0V
34 32 30 Pout 28 Gain 26 PAE 24 22 20 18 16 14 12 10 8 6 4 2 0 -14 -12 -10 -8 -6 -4 -2
Pout (dBm), GAIN (dB), PAE (%)
2
4
6
8
10 12 14 16
Pout (dBm), GAIN (dB), PAE (%)
0
2
4
6
8
10 12 14 16
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature, Vs= 3.6V
42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz)
Output IP3 vs. Temperature, Vs= 5.0V
42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz)
OIP3 (dBm)
+25 C +85 C -40 C
OIP3 (dBm)
+25 C +85 C -40 C
2.9
3
2.9
3
8 - 176
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.1202
HMC414MS8G
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
Reverse Isolation vs. Temperature, Vs= 3.6V
0 -5 -10
+25 C +85 C -40 C
Power Down Isolation, Vs= 3.6V
0 -10
8
AMPLIFIERS - SMT
Icq (mA)
ISOLATION (dB)
ISOLATION (dB)
-15 -20 -25 -30 -35 -40 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz)
-20 -30 -40 -50 -60 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz)
Noise Figure vs. Temperature, Vs= 3.6V
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz)
Noise Figure vs. Temperature, Vs= 5.0V
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 FREQUENCY (GHz)
+25 C
+25 C +85 C -40 C
NOISE FIGURE (dB)
2.9
3
NOISE FIGURE (dB)
+85 C -40 C
2.9
3
Gain & Power vs. Supply Voltage
28 27 26 25
Gain
Gain, Power & Quiescent Supply Current vs Vpd@ 2.4 GHz
34
GAIN (dB), P1dB (dBm), Psat (dBm)
32 30 28 26 24
P1dB Psat
24 23 22 21 20 19 18 2.75 3.25 3.75 4.25 4.75
22 20 18 16 14 5.25
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 2 2.2 2.4 2.6 2.8
400 360 320 280 240 200 160 120 80
Gain P1dB Psat Icq
P1dB, Psat (dBm)
GAIN dB)
40 0
3
3.2
3.4
3.6
Vcc SUPPLY VOLTAGE (Vdc)
Vpd (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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MICROWAVE CORPORATION
v02.1202
HMC414MS8G
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
8
AMPLIFIERS - SMT
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) Control Voltage (Vpd1, Vpd2) RF Input Power (RFin)(Vs = +5.0, Vpd = +3.6 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 27 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc +4.0 Vdc +20 dBm 150 C 1.755 W
37 C/W -65 to +150 C -40 to +85 C
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
8 - 178
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.1202
HMC414MS8G
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
8
Not Connected.
2
NC
3, 4
RF OUT
RF output and DC bias for the output stage.
5
GND
Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required.
6, 8
Vpd1, Vpd2
Power control pin. For maximum power, this pin should be connected to 3.6V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced.
7
Vcc
Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 179
AMPLIFIERS - SMT
1
RF IN
This pin is AC coupled and matched to 50 Ohms from 2.2 to 2.8 GHz.
MICROWAVE CORPORATION
v02.1202
HMC414MS8G
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
8
AMPLIFIERS - SMT
Evaluation PCB
* For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8.
List of Material
Item J1 - J2 J3 C1 C2 C3 - C6 C7 L1 U1 PCB* Description PC Mount SMA RF Connector 2 mm DC Header 2.7 pF Capacitor, 0603 Pkg. 100 pF Capacitor, 0402 Pkg. 330 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum 18nH Inductor 0603 Pkg. HMC414MS8G Amplifier 105074 Eval Board
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
* Circuit Board Material: Rogers 4350
8 - 180
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v02.1202
HMC414MS8G
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz
Application Circuit
8
AMPLIFIERS - SMT
TL1 Impedance Length 50 Ohm 0.036" TL2 50 Ohm 0.3" TL3 50 Ohm 0.11"
* For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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